|
M48Z58 M48Z58Y 5 V, 64 Kbit (8 Kbit x 8) ZEROPOWER® SRAM Features ■ Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages: (VPFD = power-fail des
M48Z58 M48Z58Y 5 V, 64 Kbit (8 Kbit x 8) ZEROPOWER® SRAM Features ■ Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages: (VPFD = power-fail des
M48Z512A M48Z512AY, M48Z512AV 4 Mbit (512 Kbit x 8) ZEROPOWER® SRAM Not recommended for new design Features ■ Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited )WRITE cycles t(s■ 10 years of data retention in the absence of
M48Z35 M48Z35Y 256 Kbit (32 Kbit x 8) ZEROPOWER® SRAM Features ■ Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages: (VPFD = power-fail desele
M48Z35AY M48Z35AV 256 Kbit (32Kb x8) ZEROPOWER® SRAM s INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME BATTERY LOW FLAG (BOK) AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES (VPFD = Power-fail Deselect V
M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER® SRAM Not recommended for new design Features ■ Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited )WRITE cycles t(s■ 10 years of data retention in the absence o
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |