파트넘버.co.kr M48Z19 데이터시트 검색

M48Z19 전자부품 데이터시트



M48Z19 전자부품 회로 및
기능 검색 결과



M48Z19  

STMicroelectronics
STMicroelectronics

M48Z19

CMOS 8K x 8 ZEROPOWER SRAM

M48Z09 M48Z19 CMOS 8K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION POWER-FAIL INTERRUPT CHOICE




관련 부품 M48Z 상세설명

M48Z58  

  
64 Kbit (8 Kbit x 8) ZEROPOWER SRAM

M48Z58 M48Z58Y 5 V, 64 Kbit (8 Kbit x 8) ZEROPOWER® SRAM Features ■ Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages: (VPFD = power-fail des



ST Microelectronics
ST Microelectronics

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M48Z58  

  
64 Kbit (8 Kbit x 8) ZEROPOWER SRAM

M48Z58 M48Z58Y 5 V, 64 Kbit (8 Kbit x 8) ZEROPOWER® SRAM Features ■ Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages: (VPFD = power-fail des



ST Microelectronics
ST Microelectronics

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M48Z512AV  

  
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

M48Z512A M48Z512AY, M48Z512AV 4 Mbit (512 Kbit x 8) ZEROPOWER® SRAM Not recommended for new design Features ■ Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited )WRITE cycles t(s■ 10 years of data retention in the absence of



STMicroelectronics
STMicroelectronics

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M48Z35Y  

  
256 Kbit (32 Kbit x 8) ZEROPOWER SRAM

M48Z35 M48Z35Y 256 Kbit (32 Kbit x 8) ZEROPOWER® SRAM Features ■ Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages: (VPFD = power-fail desele



ST Microelectronics
ST Microelectronics

PDF



M48Z35AY  

  
256 Kbit 32Kb x8 ZEROPOWER SRAM

M48Z35AY M48Z35AV 256 Kbit (32Kb x8) ZEROPOWER® SRAM s INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME BATTERY LOW FLAG (BOK) AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES (VPFD = Power-fail Deselect V



ST Microelectronics
ST Microelectronics

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M48Z2M1Y  

  
16 Mbit (2 Mb x 8) ZEROPOWER SRAM

M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER® SRAM Not recommended for new design Features ■ Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited )WRITE cycles t(s■ 10 years of data retention in the absence o



ST Microelectronics
ST Microelectronics

PDF




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