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Datasheet M36W108 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | M36W108 | 8 Mbit 1Mb x8 / Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product M36W108T M36W108B
8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product
NOT FOR NEW DESIGN
s
M36W108T and M36W108B are replaced respectively by the M36W108AT and M36W108AB
SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read
s
B |  ST Microelectronics | ram |
| 2 | M36W108AB | 8 Mbit 1Mb x8 / Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product M36W108AT M36W108AB
8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product
PRELIMINARY DATA
s
SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read
s s
ACCESS TIME: 100ns LOW POWER CONSUMPTION – Read: 40mA max. (SRAM chip) – S | ST Microelectronics | ram |
| 3 | M36W108AT | 8 Mbit 1Mb x8 / Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product M36W108AT M36W108AB
8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product
PRELIMINARY DATA
s
SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read
s s
ACCESS TIME: 100ns LOW POWER CONSUMPTION – Read: 40mA max. (SRAM chip) – S | ST Microelectronics | ram |
| 4 | M36W108B | 8 Mbit 1Mb x8 / Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product M36W108T M36W108B
8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product
NOT FOR NEW DESIGN
s
M36W108T and M36W108B are replaced respectively by the M36W108AT and M36W108AB
SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read
s
B | ST Microelectronics | ram |
| 5 | M36W108T | 8 Mbit 1Mb x8 / Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product M36W108T M36W108B
8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product
NOT FOR NEW DESIGN
s
M36W108T and M36W108B are replaced respectively by the M36W108AT and M36W108AB
SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read
s
B | ST Microelectronics | ram |
M36 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | M3604A | (M3604A / M3624A) HIGH-SPEED PROM Intel Corporation data | | |
| 2 | M3624A | (M3604A / M3624A) HIGH-SPEED PROM Intel Corporation data | | |
| 3 | M366S0823CT0 | SDRAM DIMM M366S0823CT0
M366S0823CT0 SDRAM DIMM
PC100 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
The Samsung M366S0823CT0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823CT0 consists of eigh  Samsung Semiconductor data | | |
| 4 | M366S0823CTF | SDRAM DIMM M366S0823CTF
M366S0823CTF SDRAM DIMM
PC66 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
The Samsung M366S0823CTF is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823CTF consists of eight Samsung Semiconductor data | | |
| 5 | M366S0823CTL | SDRAM DIMM M366S0823CTL
M366S0823CTL SDRAM DIMM
PC66 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
The Samsung M366S0823CTL is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823CTL consists of eight Samsung Semiconductor data | | |
| 6 | M366S0823CTS | SDRAM DIMM M366S0823CTS
M366S0823CTS SDRAM DIMM
PC100 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
The Samsung M366S0823CTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823CTS consists of eigh Samsung Semiconductor data | | |
| 7 | M366S0823DTF | SDRAM DIMM M366S0823DTF
M366S0823DTF SDRAM DIMM
PC66 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
The Samsung M366S0823DTF is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823DTF consists of eight Samsung Semiconductor data | |
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