M29W800DB
Numonyx
3V supply flash memoryM29W800DT M29W800DB
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
Features
Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read
Access times: 45, 70, 90 ns
Programming time – 10 μs per byte/word typical
M29W800DB
ST Microelectronics
8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 3V Supply Flash MemoryM29W800DT M29W800DB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typ