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M29W800DB 전자부품 데이터시트



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M29W800DB  

Numonyx
Numonyx

M29W800DB

3V supply flash memory

M29W800DT M29W800DB 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory Features „ Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read „ Access times: 45, 70, 90 ns „ Programming time – 10 μs per byte/word typical



M29W800DB  

ST Microelectronics
ST Microelectronics

M29W800DB

8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 3V Supply Flash Memory

M29W800DT M29W800DB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typ



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