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M29W800DT M29W800DB 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory Features Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access times: 45, 70, 90 ns Programming time – 10 μs per byte/word typical 19 memory blocks – 1 boot block (top
M29W800T M29W800B 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W800T and M29W800B are replaced respectively by the M29W800AT and M29W800AB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 90ns FAST PROGRAMM
M29W800AT M29W800AB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory s 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 80ns PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or Word-by-Word – S
M29W800DT M29W800DB 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory Features Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access times: 45, 70, 90 ns Programming time – 10 μs per byte/word typical 19 memory blocks – 1 boot block (top
M29W800AT M29W800AB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory s 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 80ns PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or Word-by-Word – S
M29W800DT M29W800DB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 19 MEMORY BLOCKS – 1 Boot Block (
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