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M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAMMING TIME – 10 µs
M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAMMING TIME – 10 µs
M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAMMING TIME – 10 µs
M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAMMING TIME – 10 µs
M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAMMING TIME – 10 µs
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