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Datasheet M29W640D Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 51 | M29W640D | FLASH NOR HIGH DENSITY & CONSUMER FLASH NOR HIGH DENSITY & CONSUMER
M29DWxxx FAMILY Multiple Bank
May, 2004
HD & Cons. Division -VAM29DW.ppt – ptfl0402-504
STMicroelectronics
www.st.com/flash
Family Overview
¾Densities from 32Mb to 64Mb ¾Wide application area covered ¾0.15µm process technology
¾technology shrink on going |
 ST Microelectronics |
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| 50 | M29W640DB | 64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional)
s s
Figure 1. Packages
ACCESS TIME: 70, 90 ns PROGRAMMING TIME – 10 µs |
ST Microelectronics |
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| 49 | M29W640DB70N1E | 64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional)
s s
Figure 1. Packages
ACCESS TIME: 70, 90 ns PROGRAMMING TIME – 10 µs |
ST Microelectronics |
|
| 48 | M29W640DB70N1F | 64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional)
s s
Figure 1. Packages
ACCESS TIME: 70, 90 ns PROGRAMMING TIME – 10 µs |
ST Microelectronics |
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