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M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY B
M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY B
M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY B
M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY B
M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY B
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