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M29W400DT45N1E 전자부품 데이터시트



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M29W400DT45N1E  

ST Microelectronics
ST Microelectronics

M29W400DT45N1E

4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory

M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME �




관련 부품 M29W400DT45N 상세설명

M29W400DT45N6T  

  
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory

M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY B



ST Microelectronics
ST Microelectronics

PDF



M29W400DT45N6F  

  
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory

M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY B



ST Microelectronics
ST Microelectronics

PDF



M29W400DT45N6E  

  
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory

M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY B



ST Microelectronics
ST Microelectronics

PDF



M29W400DT45N1T  

  
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory

M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY B



ST Microelectronics
ST Microelectronics

PDF



M29W400DT45N1F  

  
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory

M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY B



ST Microelectronics
ST Microelectronics

PDF




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