M29W400DT45M6T
ST Microelectronics
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash MemoryM29W400DT M29W400DB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME �
M29W400DT45M6F
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash MemoryM29W400DT M29W400DB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY B
ST Microelectronics
PDF
M29W400DT45M6E
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash MemoryM29W400DT M29W400DB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY B
ST Microelectronics
PDF