M29W400DB
Numonyx
3V supply Flash memoryM29W400DT M29W400DB
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
Features
Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read
Access time: 45, 55, 70 ns
Programming time – 10 μs per byte/word typical
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M29W400DB
ST Microelectronics
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash MemoryM29W400DT M29W400DB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME �