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M29W160FT M29W160FB M29W320FT M29W320FB 16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory Features Supply voltage – VCC = 2.5 V to 3.6 V (access time: 80 ns) or 2.7 to 3.6 V (access time: 70 ns) for Program, Erase and Read – VPP = 12 V for Fast Program (optional, available
M29W160FT M29W160FB M29W320FT M29W320FB 16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory Features Supply voltage – VCC = 2.5 V to 3.6 V (access time: 80 ns) or 2.7 to 3.6 V (access time: 70 ns) for Program, Erase and Read – VPP = 12 V for Fast Program (optional, available
M29W160BT M29W160BB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Low Voltage Single Supply Flash Memory PRELIMINARY DATA s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 35 MEMORY BLOCKS – 1 Boot Block (Top or
M29W160DT M29W160DB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s s Figure 1. Packages ACCESS TIME: 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 44 s 35 MEMOR
M29W160ET M29W160EB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIMES: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical ■ 35 MEMORY BLOCKS – 1 Boot
M29W160DT M29W160DB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s s Figure 1. Packages ACCESS TIME: 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 44 s 35 MEMOR
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