파트넘버.co.kr M29W160BT 데이터시트 검색

M29W160BT 전자부품 데이터시트



M29W160BT 전자부품 회로 및
기능 검색 결과



M29W160BT  

ST Microelectronics
ST Microelectronics

M29W160BT

16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Low Voltage Single Supply Flash Memory

M29W160BT M29W160BB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Low Voltage Single Supply Flash Memory PRELIMINARY DATA s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 3




관련 부품 M29W160 상세설명

M29W160FT  

  
3V supply Flash memory

M29W160FT M29W160FB M29W320FT M29W320FB 16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory Features „ Supply voltage – VCC = 2.5 V to 3.6 V (access time: 80 ns) or 2.7 to 3.6 V (access time: 70 ns) for Program, Erase and Read – VPP = 12 V for Fast Program (optional, available



Numonyx
Numonyx

PDF



M29W160FB  

  
3V supply Flash memory

M29W160FT M29W160FB M29W320FT M29W320FB 16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory Features „ Supply voltage – VCC = 2.5 V to 3.6 V (access time: 80 ns) or 2.7 to 3.6 V (access time: 70 ns) for Program, Erase and Read – VPP = 12 V for Fast Program (optional, available



Numonyx
Numonyx

PDF



M29W160BB  

  
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Low Voltage Single Supply Flash Memory

M29W160BT M29W160BB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Low Voltage Single Supply Flash Memory PRELIMINARY DATA s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 35 MEMORY BLOCKS – 1 Boot Block (Top or



ST Microelectronics
ST Microelectronics

PDF



M29W160DB  

  
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block 3V Supply Flash Memory

M29W160DT M29W160DB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s s Figure 1. Packages ACCESS TIME: 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 44 s 35 MEMOR



ST Microelectronics
ST Microelectronics

PDF



M29W160ET  

  
16 Mbit 3V Supply Flash Memory

M29W160ET M29W160EB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIMES: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical ■ 35 MEMORY BLOCKS – 1 Boot



Numonyx
Numonyx

PDF



M29W160DT  

  
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block 3V Supply Flash Memory

M29W160DT M29W160DB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s s Figure 1. Packages ACCESS TIME: 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 44 s 35 MEMOR



ST Microelectronics
ST Microelectronics

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처