파트넘버.co.kr M29W004T 데이터시트 검색

M29W004T 전자부품 데이터시트



M29W004T 전자부품 회로 및
기능 검색 결과



M29W004T  

ST Microelectronics
ST Microelectronics

M29W004T

4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory

M29W004T M29W004B 4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W004T and M29W004B are replaced respectively by the M29W004BT and M29W004BB 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACC




관련 부품 M29W00 상세설명

M29W008DT  

  
8 Mbit 3V Supply Flash Memory

M29W008DT M29W008DB 8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70ns, 90ns PROGRAMMING TIME: 10µs per Byte typical PROGRAM/ER



ST Microelectronics
ST Microelectronics

PDF



M29W008B  

  
8 Mbit 1Mb x8 / Boot Block Low Voltage Single Supply Flash Memory

M29W008T M29W008B 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W008T and M29W008B are replaced respectively by the M29W008AT and M29W008AB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME: 10



ST Microelectronics
ST Microelectronics

PDF



M29W008AT  

  
8 Mbit 1Mb x8 / Boot Block Low Voltage Single Supply Flash Memory

M29W008AT M29W008AB 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory s 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 80ns PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte – Status Register bits and Ready



ST Microelectronics
ST Microelectronics

PDF



M29W004BT  

  
4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory

M29W004BT M29W004BB 4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 10µs by Byte typical 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter



ST Microelectronics
ST Microelectronics

PDF



M29W004BB  

  
4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory

M29W004BT M29W004BB 4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 10µs by Byte typical 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter



ST Microelectronics
ST Microelectronics

PDF



M29W004  

  
4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory

M29W004BT M29W004BB 4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 10µs by Byte typical 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter



ST Microelectronics
ST Microelectronics

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처