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M29F800DT 전자부품 데이터시트



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M29F800DT  

ST Microelectronics
ST Microelectronics

M29F800DT

8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 5V Supply Flash Memory

M29F800DT M29F800DB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE s s Figure 1. Packages – VCC = 5V ±10% for Program, Erase and Read ACCESS TIME: 55, 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typ




관련 부품 M29F800 상세설명

M29F800D  

  
8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 5V Supply Flash Memory

M29F800DT M29F800DB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE s s Figure 1. Packages – VCC = 5V ±10% for Program, Erase and Read ACCESS TIME: 55, 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 19 MEMORY BLOCKS – 1 Boot Block (



ST Microelectronics
ST Microelectronics

PDF



M29F800AT  

  
8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Single Supply Flash Memory

M29F800AT M29F800AB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 70ns PROGRAMMING TIME – 8µs per Byte/Word typical 19 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location



ST Microelectronics
ST Microelectronics

PDF



M29F800AB  

  
8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Single Supply Flash Memory

M29F800AT M29F800AB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 70ns PROGRAMMING TIME – 8µs per Byte/Word typical 19 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location



ST Microelectronics
ST Microelectronics

PDF



M29F800DB  

  
8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 5V Supply Flash Memory

M29F800DT M29F800DB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE s s Figure 1. Packages – VCC = 5V ±10% for Program, Erase and Read ACCESS TIME: 55, 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 19 MEMORY BLOCKS – 1 Boot Block (



ST Microelectronics
ST Microelectronics

PDF



M29F800FB  

  
(M29Fxx0Fx) Top / Bottom Boot Block 5 V Supply Flash Memory

M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms „ Erase Suspend and Resume modes „ Low power consum



Numonyx
Numonyx

PDF



M29F800FT  

  
(M29Fxx0Fx) Top / Bottom Boot Block 5 V Supply Flash Memory

M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms „ Erase Suspend and Resume modes „ Low power consum



Numonyx
Numonyx

PDF




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