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M29F800DT M29F800DB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE s s Figure 1. Packages – VCC = 5V ±10% for Program, Erase and Read ACCESS TIME: 55, 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 19 MEMORY BLOCKS – 1 Boot Block (
M29F800AT M29F800AB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 70ns PROGRAMMING TIME – 8µs per Byte/Word typical 19 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location
M29F800AT M29F800AB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 70ns PROGRAMMING TIME – 8µs per Byte/Word typical 19 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location
M29F800DT M29F800DB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE s s Figure 1. Packages – VCC = 5V ±10% for Program, Erase and Read ACCESS TIME: 55, 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 19 MEMORY BLOCKS – 1 Boot Block (
M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features Supply voltage – VCC = 5 V Access time: 55 ns Program / Erase controller – Embedded byte/word program algorithms Erase Suspend and Resume modes Low power consum
M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features Supply voltage – VCC = 5 V Access time: 55 ns Program / Erase controller – Embedded byte/word program algorithms Erase Suspend and Resume modes Low power consum
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