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M29F400T M29F400B 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash Memory NOT FOR NEW DESIGN M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10
M29F400BT M29F400BB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory Features ■ Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical ■ 11 memory blocks – 1 Boot Block (Top or Bo
M29F400T M29F400B 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash Memory NOT FOR NEW DESIGN M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10
M29F400BT M29F400BB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte/Word typical 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Locati
M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features Supply voltage – VCC = 5 V Access time: 55 ns Program / Erase controller – Embedded byte/word program algorithms Erase Suspend and Resume modes Low power consum
M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features Supply voltage – VCC = 5 V Access time: 55 ns Program / Erase controller – Embedded byte/word program algorithms Erase Suspend and Resume modes Low power consum
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