파트넘버.co.kr M29F200FT 데이터시트 검색

M29F200FT 전자부품 데이터시트



M29F200FT 전자부품 회로 및
기능 검색 결과



M29F200FT  

Numonyx
Numonyx

M29F200FT

(M29Fxx0Fx) Top / Bottom Boot Block 5 V Supply Flash Memory

M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms „ Erase Susp




관련 부품 M29F200 상세설명

M29F200T  

  
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory

M29F200T M29F200B 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or W



ST Microelectronics
ST Microelectronics

PDF



M29F200BT  

  
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory

M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte/Word typical 7 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Locatio



ST Microelectronics
ST Microelectronics

PDF



M29F200B  

  
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory

M29F200T M29F200B 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or W



ST Microelectronics
ST Microelectronics

PDF



M29F200  

  
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory

M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte/Word typical 7 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Locatio



ST Microelectronics
ST Microelectronics

PDF



M29F200FB  

  
(M29Fxx0Fx) Top / Bottom Boot Block 5 V Supply Flash Memory

M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms „ Erase Suspend and Resume modes „ Low power consum



Numonyx
Numonyx

PDF



M29F200BB  

  
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory

M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte/Word typical 7 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Locatio



ST Microelectronics
ST Microelectronics

PDF




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