파트넘버.co.kr M29F100BT 데이터시트 검색

M29F100BT 전자부품 데이터시트



M29F100BT 전자부품 회로 및
기능 검색 결과



M29F100BT  

ST Microelectronics
ST Microelectronics

M29F100BT

1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory

M29F100BT M29F100BB 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte/Word typical 5 MEMORY BLOCKS




관련 부품 M29F100 상세설명

M29F100T  

  
1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory

M29F100T M29F100B 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or



ST Microelectronics
ST Microelectronics

PDF



M29F100BB  

  
1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory

M29F100BT M29F100BB 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte/Word typical 5 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location



ST Microelectronics
ST Microelectronics

PDF



M29F100B  

  
1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory

M29F100T M29F100B 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or



ST Microelectronics
ST Microelectronics

PDF



M29F100  

  
1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory

M29F100BT M29F100BB 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte/Word typical 5 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location



ST Microelectronics
ST Microelectronics

PDF




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