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Datasheet M29F002 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
10 | M29F002 | 2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory M29F002T, M29F002NT M29F002B
2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory
5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte – Status Register bits MEMORY |
ST Microelectronics |
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9 | M29F002 | 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory PRELIMINARY
Am29F002/Am29F002N
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements s High performance — Access |
Advanced Micro Devices |
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8 | M29F002 | 2M (256K X 8) BIT FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20868-3E
FLASH MEMORY
CMOS
2M (256K × 8) BIT
MBM29F002TC-55/-70/-90/MBM29F002BC-55/-70/-90
s FEATURES
• • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Pinout and software compatible |
Fujitsu Media Devices Limited |
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7 | M29F002 | 2M-BIT [256K x 8] CMOS FLASH MEMORY MX29F002/002N
2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES
• • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current Programming and erasing voltage 5V ± 10% Command register architecture - Byte Programming ( |
Macronix International |
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Número de pieza | Descripción | Fabricantes | |
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