파트넘버.co.kr M2951 데이터시트 검색

M2951 전자부품 데이터시트



M2951 전자부품 회로 및
기능 검색 결과



M2951  

Unisonic Technologies
Unisonic Technologies

M2951

(M2950 / M2951) LOW-DROPOUT VOLTAGE REGULATOR

UTC M2950/2951 LINEAR INTEGRATED CIRCUIT 250 mA LOW-DROPOUT VOLTAGE REGULATOR DESCRIPTION The UTC M2950/2951 is a monolithic integrated voltage regulator with low dropout voltage, and low quiescent current. It includes many features that




관련 부품 M29 상세설명

M29DW323DB90ZE6F  

  
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory

M29DW323DT M29DW323DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs



ST Microelectronics
ST Microelectronics

PDF



M29W400T-120M5R  

  
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory

M29W400T M29W400B 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively by the M29W400BT and M29W400BB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 90ns FAST PROGRA



ST Microelectronics
ST Microelectronics

PDF



M29DW324DT70ZA1  

  
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 16:16 / Boot Block 3V Supply Flash Memory

M29DW324DT M29DW324DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µ



ST Microelectronics
ST Microelectronics

PDF



M29DW324DT90ZE1  

  
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 16:16 / Boot Block 3V Supply Flash Memory

M29DW324DT M29DW324DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µ



ST Microelectronics
ST Microelectronics

PDF



M29W004T  

  
4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory

M29W004T M29W004B 4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W004T and M29W004B are replaced respectively by the M29W004BT and M29W004BB 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME: 1



ST Microelectronics
ST Microelectronics

PDF



M29F100BT  

  
1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory

M29F100BT M29F100BB 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte/Word typical 5 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location



ST Microelectronics
ST Microelectronics

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처