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M28F102 전자부품 데이터시트



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M28F102  

STMicroelectronics
STMicroelectronics

M28F102

1 Mbit Flash Memory

www.DataSheet.co.kr M28F102 1 Mbit (64Kb x16, Bulk) Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA ty




관련 부품 M28F1 상세설명

M28F101  

  
1 Mb FLASH MEMORY

M28F101 1 Mb (128K x 8, Chip Erase) FLASH MEMORY 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max 10,000 ERASE/PROGRAM CYCLES INTEGRATED ERASE/PROGRAM-



STMicroelectronics
STMicroelectronics

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