M28F102
STMicroelectronics
1 Mbit Flash Memorywww.DataSheet.co.kr
M28F102
1 Mbit (64Kb x16, Bulk) Flash Memory
5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA ty
M28F101
1 Mb FLASH MEMORYM28F101
1 Mb (128K x 8, Chip Erase) FLASH MEMORY
5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE
FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE
LOW POWER CONSUMPTION – Stand-by Current: 100µA max 10,000 ERASE/PROGRAM CYCLES
INTEGRATED ERASE/PROGRAM-
STMicroelectronics
PDF