M28F008
Intel Corporation
8 MBIT (1 MBIT x 8) FLASH MEMORYM28F008 8 MBIT (1 MBIT x 8) FLASH MEMORY
Y
High-Density Symmetrically Blocked Architecture Sixteen 64 Kbyte Blocks Extended Cycling Capability 10K Block Erase Cycles Minimum 160K Block Erase Cycles per Chip Automated Byte Write and Block Erase Command User In
M28F010
1024K (128K x 8) CMOS FLASH MEMORYM28F010 1024K (128K x 8) CMOS FLASH MEMORY
Y
Y
Y
Y
Y
Flash Electrical Chip-Erase 5 Second Typical Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Typical Chip-Program Single High Voltage for Writing and Erasing CMOS Low Power Consumption 30 mA Maximum Active Current 100 mA
Intel Corporation
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