Datasheet LP9435LT1G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	LP9435LT1G	P-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, [email protected] = 70mΩ RDS(ON), [email protected], [email protected] = 100mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM S- Prefix for Automot	LRC

LP9435L Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
LP9435LT1G	P-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, [email protected] = 70mΩ RDS(ON), [email protected], [email protected] = 100mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM S	LRC

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Número de pieza	Descripción	Fabricantes	PDF
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