Datasheet LP2301BLT1G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	LP2301BLT1G	P-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), [email protected], [email protected] = 100 mΩ RDS(ON), [email protected], [email protected] = 150 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Curre	LRC

LP2301BL Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
LP2301BLT1G	P-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), [email protected], [email protected] = 100 mΩ RDS(ON), [email protected], [email protected] = 150 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanc	LRC

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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