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Bridge Diode 低ノイズタイプ シングルインライン型 Low Noise type Single In-line Package LN15XB60 ■外観図 OUTLINE Package:5S Unit : mm Weight : 7.1g(typ.) 600V 15A 特長 • 薄型 SIP パッケージ • 低ノイズ • 高放熱伝導性 L15X60 0264 Feature
Bridge Diode 低ノイズタイプ シングルインライン型 Low Noise type Single In-line Package LN15XB60H ■外観図 OUTLINE Package:5S Unit : mm Weight : 7.1g(typ.) 600V 15A 特長 • 薄型 SIP パッケージ • 低ノイズ • 高 IFSM • 高放熱伝導性 Feature
Infrared Light Emitting Diodes LNA2701L GaAs Bi-directional Infrared Light Emitting Diode 8˚ 8˚ Unit : mm For light source of VCR (VHS System) 0.5 max. Features Two-way directivity High-power output, high-efficiency : PO = 1.8 mW (min.) Small resin package Long lifetime, high reliability Thin
Infrared Light Emitting Diodes LN152 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 10 mW (typ.) Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light
Infrared Light Emitting Diodes LN151F, LN151L GaAs Infrared Light Emitting Diodes For optical control systems Features High-power output, high-efficiency : PO = 7.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 1 µs (typ.) LN151F ø4.6±0.15 Unit : mm Glass window 12.7
Infrared Light Emitting Diodes LN151F, LN151L GaAs Infrared Light Emitting Diodes For optical control systems Features High-power output, high-efficiency : PO = 7.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 1 µs (typ.) LN151F ø4.6±0.15 Unit : mm Glass window 12.7
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