LN151
Panasonic Semiconductor
GaAs Infrared Light Emitting DiodesInfrared Light Emitting Diodes
LN151F, LN151L
GaAs Infrared Light Emitting Diodes
For optical control systems Features
High-power output, high-efficiency : PO = 7.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 1 µs (typ.)
LN151F
LN151F
Panasonic Semiconductor
GaAs Infrared Light Emitting DiodesInfrared Light Emitting Diodes
LN151F, LN151L
GaAs Infrared Light Emitting Diodes
For optical control systems Features
High-power output, high-efficiency : PO = 7.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 1 µs (typ.)
LN151F
LN151L
Panasonic Semiconductor
GaAs Infrared Light Emitting DiodesInfrared Light Emitting Diodes
LN151F, LN151L
GaAs Infrared Light Emitting Diodes
For optical control systems Features
High-power output, high-efficiency : PO = 7.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 1 µs (typ.)
LN151F