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LET9085 전자부품 데이터시트



LET9085 전자부품 회로 및
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LET9085  

STMicroelectronics
STMicroelectronics

LET9085

RF POWER TRANSISTORS Ldmos Enhanced Technology

LET9085 RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-95 CDMA PERFORMANCES POUT = 20 W EFF. = 28 % • EDGE PERFORMANCES POUT = 35 W EFF. = 35 % • GSM PERFORMANCES POUT = 75 W EFF. = 55 % • EX




관련 부품 LET90 상세설명

LET9045C  

  
RF power transistor

LET9045C RF power transistor the LdmoST family Features ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 45 W with 18.5 dB gain @ 960 MHz BeO free package In compliance with the 2002/95/EC european directive M243 epoxy sealed Description The



ST Microelectronics
ST Microelectronics

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LET9060S  

  
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 17 dB gain @ 945 MHz / 26V • NEW RF PLASTIC PACKAGE • HIGH GAIN • ESD PRO



STMicroelectronics
STMicroelectronics

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LET9060C  

  
RF POWER TRANSISTORS Ldmos Enhanced Technology

LET9060C RF POWER TRANSISTORS Ldmos Enhanced Technology PRELIMINARY DATA N-CHANNEL MOSFETs ENHANCEMENT-MODE LATERAL • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W WITH 17.3 dB gain @ 945 MHz • BeO FREE PACKAGE • HIGH GAIN • ESD PROTECTION ORDER CODE LET9060



STMicroelectronics
STMicroelectronics

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LET9006  

  
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

LET9006 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 17 dB gain @ 960 MHz / 26V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION • SU



STMicroelectronics
STMicroelectronics

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LET9002  

  
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

LET9002 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 17 dB gain @ 960 MHz / 26 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION • S



STMicroelectronics
STMicroelectronics

PDF



LET9045S  

  
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE • HIGH GAIN • ESD PROT



STMicroelectronics
STMicroelectronics

PDF




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