LET20030C
STMicroelectronics
RF POWER TRANSISTORS Ldmos Enhanced TechnologyLET20030C
RF POWER TRANSISTORS Ldmos Enhanced Technology
TARGET DATA
Designed for GSM / EDGE / IS-97 applications
• IS-97 CDMA PERFORMANCES POUT = 4.5 W EFF. = 17 % • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 11 dB
LET20030S
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic PackageLET20030S
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
TARGET DATA
Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTION • IS-97 CDMA PERFORMANCES POUT = 4.5 W
STMicroelectronics
PDF