LE28F4001C
Sanyo Semicon Device
4M-Bit (512k 8) Flash EEPROMPreliminary Specifications
CMOS LSI
LE28F4001CTS-12 4M-Bit (512k × 8) Flash EEPROM
Features
CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Act
LE28F4001CTS
Sanyo Semicon Device
4M-Bit (512k 8) Flash EEPROMPreliminary Specifications
CMOS LSI
LE28F4001CTS-12 4M-Bit (512k × 8) Flash EEPROM
Features
CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Act
LE28F4001CTS-12
Sanyo Semicon Device
4M-Bit (512k 8) Flash EEPROMPreliminary Specifications
CMOS LSI
LE28F4001CTS-12 4M-Bit (512k × 8) Flash EEPROM
Features
CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Act