LD271
Siemens Group
GaAs-IR-Lumineszenzdiode GaAs Infrared EmitterGaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
LD 271, LD 271 H LD 271 L, LD 271 HL
Area not flat 0.6 0.4 9.0 8.2 7.8 7.5
2.54 mm spacing
1.3 1.0
5.9 5.5
1.0 0.7
Cathode Approx. weight 0.5 g
Chip position
GEX06239
Cathode 29 27 9.0 8.2
spacing 2.54m
LD271
Siemens Group
INFRARD EMITTERGaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
LD 271, LD 271 H LD 271 L, LD 271 HL
Area not flat 0.6 0.4 9.0 8.2 7.8 7.5
2.54 mm spacing
1.3 1.0
5.9 5.5
1.0 0.7
Cathode Approx. weight 0.5 g
Chip position
GEX06239
Cathode 29 27 9.0 8.2
spacing 2.54m
LD271H
Siemens Group
GaAs-IR-Lumineszenzdiode GaAs Infrared EmitterGaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
LD 271, LD 271 H LD 271 L, LD 271 HL
Area not flat 0.6 0.4 9.0 8.2 7.8 7.5
2.54 mm spacing
1.3 1.0
5.9 5.5
1.0 0.7
Cathode Approx. weight 0.5 g
Chip position
GEX06239
Cathode 29 27 9.0 8.2
spacing 2.54m
LD271H
Siemens Group
INFRARD EMITTERGaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
LD 271, LD 271 H LD 271 L, LD 271 HL
Area not flat 0.6 0.4 9.0 8.2 7.8 7.5
2.54 mm spacing
1.3 1.0
5.9 5.5
1.0 0.7
Cathode Approx. weight 0.5 g
Chip position
GEX06239
Cathode 29 27 9.0 8.2
spacing 2.54m
LD271HL
Siemens Group
GaAs-IR-Lumineszenzdiode GaAs Infrared EmitterGaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
LD 271, LD 271 H LD 271 L, LD 271 HL
Area not flat 0.6 0.4 9.0 8.2 7.8 7.5
2.54 mm spacing
1.3 1.0
5.9 5.5
1.0 0.7
Cathode Approx. weight 0.5 g
Chip position
GEX06239
Cathode 29 27 9.0 8.2
spacing 2.54m