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SEMICONDUCTOR TECHNICAL DATA KTD2060 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Good Linearity of hFE. Complementary to KTB1368. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Co
KTD2092 Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 高放大,饱和压降低。 High hFE, low saturation voltage. 用途 / Applications 用于开关、界面电路�
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KTD2060 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 3A, IB= 0.3A) ·Comp
SEMICONDUCTOR TECHNICAL DATA KTD2092 EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ᴌHigh hFE : hFE=500ᴕ1500 (IC=0.5A). ᴌLow Collector Saturation :VCE(sat)=0.35V(Max.) (IC=1A). MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMB
KTD2058 TRANSISTOR (NPN) TO-220 FEATURES . Low Collector Saturation Voltage : VCE(SAT) = 1. 0V(MAX) . 1. BASE 2. COLLECTOTR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base V
SEMICONDUCTOR TECHNICAL DATA KTD2058 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Saturation Voltage : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. Complementary to KTB1366. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emi
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