KTD2060
Inchange Semiconductor
Silicon NPN Power TransistorsINCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KTD2060
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Collector Power Dissipation-
: PC= 25W@ TC= 25℃ ·Low Collector Saturation Voltage-
: VCE(sa
KTD2060
KEC
TRIPLE DIFFUSED NPN TRANSISTORSEMICONDUCTOR
TECHNICAL DATA
KTD2060
TRIPLE DIFFUSED NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES Good Linearity of hFE. Complementary to KTB1368.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base V