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Datasheet KTD2059 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | KTD2059 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KTD2059
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·Collector Power Dissipation-
: PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ (IC= 4A, IB= 0.4A) ·Com |
 Inchange Semiconductor |
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| 1 | KTD2059 | TRIPLE DIFFUSED NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
KTD2059
TRIPLE DIFFUSED NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES ᴌComplementary to KTB1367.
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Diss |
 KEC |
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| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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