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Datasheet KTD1510 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | KTD1510 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
KTD1510
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.5V(Max) @IC= 7A ·High DC Current Gain
: hFE= 5000(Min) @ IC= 7A, VCE= |
 Inchange Semiconductor |
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| 1 | KTD1510 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER DARLINGTON TRANSISTOR.
FEATURES Complementary to KTB2510. Recommended for 60W Audio Amplifier Output Stage.
KTD1510
TRIPLE DIFFUSED NPN TRANSISTOR
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base |
 KEC |
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