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SMD Type NPN Transistors KTD1304 (KTD1304S) Transistors ■ Features ● High Emitter-Base Voltage :VEBO = 12V(Min) ● High Reverse hFE ● Low on Resistance +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0
NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free KTD1304 1 2 3 SOT-23 ABSOLUTE MAXIMUM RATINGS(Ta Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Disspation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO
SMD Type NPN Transistors KTD1304 (KTD1304S) Transistors ■ Features ● High Emitter-Base Voltage :VEBO = 12V(Min) ● High Reverse hFE ● Low on Resistance +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0
KTD31 04 TRANSISTOR (NPN) SOT-23 FEATURES ·High emitter-base voltage ·low on resistance MARKING: MAX 1. BASE 2. EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base V
SEMICONDUCTOR TECHNICAL DATA AUDIO MUTING APPLICATION. FEATURES ᴌHigh Emitter-Base Voltage : VEBO=12V(Min.). ᴌHigh Reverse hFE : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). ᴌLow on Resistance :RON=0.6ή(Typ.) (IB=1mA). MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Coll
Elektronische Bauelemente KTD1304 0.3 A, 25 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z High emitter-base voltage: VEBO=12V(Min) z low on resistance: Ron=0.6Ω(max)(IB=1mA) PACKAGE DIMENSIONS 1 Base 3 Collector 2
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PartNumber.co.kr | 2020 | 연락처 |