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SEMICONDUCTOR TECHNICAL DATA FOR MUTING AND SWITCHING APPLICATION. FEATURES High Emitter-Base Voltage : VEBO=25V(Min.) High Reverse hFE A1 KTC814U EPITAXIAL PLANAR NPN TRANSISTOR B B1 1 6 5 4 D : Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on Resistance : RON=1 (Typ.), (IB=5m
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=6V, IC=400mA. Complementary to KTA711T. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vo
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ᴌA super-minimold package houses 2 transistor. A1 KTC812U EPITAXIAL PLANAR NPN TRANSISTOR B B1 1 6 5 4 D ᴌExcellent temperature response between these 2 transistor. ᴌHigh pairing property in hFE. ᴌTh
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ᴌA super-minimold package houses 2 transistor. ᴌHigh pairing property in hFE. ᴌThe follwing characteristics are common for Q1, Q2. 3 KTC812E EPITAXIAL PLANAR NPN TRANSISTOR B B1 A1 ᴌExcellent temper
SEMICONDUCTOR TECHNICAL DATA TV TUNER, UHF OSCILLATOR APPLICATION. (COMMON BASE) TV TUNER, UHF CONVERTER APPLICATION. (COMMON BASE) FEATURES A1 1 KTC813U EPITAXIAL PLANAR NPN TRANSISTOR B B1 6 5 4 D ᴌHigh Transition Frequency : fT=1500MHz (Typ.). ᴌExcellent hFE Linearity. 2 DIM A A1 B B1 C
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