KTC4377
KEC
EPITAXIAL PLANAR NPN TRANSISTORSEMICONDUCTOR
TECHNICAL DATA
KTC4377
EPITAXIAL PLANAR NPN TRANSISTOR
STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION.
FEATURES High DC Current Gain and Excellent hFE Linearity : hFE(1)=140 600(VCE=1V, IC=0.5A) : hFE(2)=70(Min.), 140(Typ.) (VCE=1V, IC=2A).
KTC4377
Weitron
NPN EPITAXIAL PLANAR TRANSISTORKTC4377
NPN EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
1. BASE 2. COLLECTOR 3. EMITTER
1 2 3
Features:
* Low saturation voltage, VCE(sat) ≤0.5V@2A/50mA * Excellent DC current gain characteristics.
SOT-89
Mechanical Data:
* Case : Molded Plastic
ABSOL
KTC4377
WEJ
NPN TransistorRoHS KTC4377
KTC4377 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM: 0.5 W (Tamb=25℃)
.,LCollector current
ICM: 2 Collector-base voltage
A
OV(BR)CBO:
30 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1.
KTC4377
TY Semiconductor
TRANSISTORSMD Type
Transistors Diodes IC Transistor T
Product specification
KTC4377
SOT-89
Unit:mm
1.50 ±0.1
■ Features
● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A
4.50±0.1 1.80±0.1
1
0.48±0.1
2
3
0.80±0.1 0.44±0.1
0.53±0.1
KTC4377
Jin Yu Semiconductor
TRANSISTORKTC4377
TRANSISTOR (NPN)
FEATURES Low voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Di