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KTC4076 TRANSISTOR (NPN) FEATURES Excellent hFE Linearity Complementary to KTA2015 SOT–323 APPLICATIONS General Purpose Switching MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 35 VCEO Collector-Emitter Voltage 30 VEBO
RoHS KTC4076 KTC4076 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 100 mW (Tamb=25℃) 1. 01 REF .,LCollector current 0. 30 2. 00¡ À0. 05 ICM: 500 Collector-base voltage mA OV(BR)CBO: 35 V 1. 30¡ À0. 03 Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. FEATURES High Current. Low VCE(sat). : VCE(sat) 250mV at IC=200mA/IB=10mA. Complementary to KTA2012V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collecto
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. FEATURES High Current. Low VCE(sat). : VCE(sat) 250mV at IC=200mA/IB=10mA. Complementary to KTA2012E. KTC4072E EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitt
SEMICONDUCTOR TECHNICAL DATA LOW NOISE AMPLIFIER APPLICATION. FEATURES High Voltage : VCEO=120V. Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). High hFE: hFE=200 700. Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTA2017. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collecto
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