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Datasheet KTC3202 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | KTC3202 | NPN Transistors DIP Type
Transistors
NPN Transistors
KTC3202
TO-92 4.8 ± 0.3
Unit:mm
3.8 ± 0.3
5.0 ± 0.2
■ Features
● Excellent hFE Linearity ● Complementary to KTA1270
0.60 Max 0.45 ± 0.1
12 3
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage |
 Kexin |
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| 3 | KTC3202 | NPN Transistor RoHS KTC3202
KTC3202 TRANSISTOR (NPN)
DFEATURES
TPower dissipation
.,LPCM:
0.625 W (Tamb=25℃)
Collector current
ICM: 0.5
OCollector-base voltage
A
V(BR)CBO:
35 V
COperating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-92
1. EMITTER 2. COLLECTOR 3. BASE
123
I |
 WEJ |
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| 2 | KTC3202 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=6V, IC=400mA. Complementary to KTA1270.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C |
 Korea Electronics |
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| 1 | KTC3202 | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE/ SWITCHING) |
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