KTB778
Inchange Semiconductor
Silicon PNP Power TransistorsINCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type KTD998
APPLICATIONS ·High power amplifier applications ·Recommend for 45-50W audi
KTB778
KEC
TRIPLE DIFFUSED PNP TRANSISTORSEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES Complementary to KTD998. Recommended for 45 50W Audio Frequency Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter