KTB1368
Inchange Semiconductor
Silicon PNP Power TransistorsINCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTB1368
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·Collector Power Dissipation-
: PC= 25W@ TC= 25℃ ·Low Collector Saturation Voltage-
: VCE(s
KTB1368
KEC
TRIPLE DIFFUSED PNP TRANSISTORSEMICONDUCTOR
TECHNICAL DATA
KTB1368
TRIPLE DIFFUSED PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES Good Linearity of hFE. Complementary to KTD2060.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base V