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KTB1366 전자부품 데이터시트



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KTB1366  

WEJ
WEJ

KTB1366

PNP Transistor

RoHS KTB1366 TO-220F KTB1366 TRANSISTOR (PNP) DFEATURES Power dissipation TPCM: 2 W (Tamb=25℃) .,LCollector current ICM: -3 Collector-base voltage A OV(BR)CBO: -60 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ 1



KTB1366  

Inchange Semiconductor
Inchange Semiconductor

KTB1366

Silicon PNP Power Transistors

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification KTB1366 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(



KTB1366  

KEC
KEC

KTB1366

TRIPLE DIFFUSED PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA KTB1366 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. Collector Power Dissipation : PC=25W (Tc=25 ) Complementary to KTD2058. MA



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