KTB1366
WEJ
PNP TransistorRoHS KTB1366
TO-220F
KTB1366 TRANSISTOR (PNP)
DFEATURES Power dissipation
TPCM:
2 W (Tamb=25℃)
.,LCollector current
ICM: -3 Collector-base voltage
A
OV(BR)CBO:
-60 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
1
KTB1366
Inchange Semiconductor
Silicon PNP Power TransistorsINCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTB1366
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Collector Power Dissipation-
: PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage-
: VCE(
KTB1366
KEC
TRIPLE DIFFUSED PNP TRANSISTORSEMICONDUCTOR
TECHNICAL DATA
KTB1366
TRIPLE DIFFUSED PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. Collector Power Dissipation : PC=25W (Tc=25 ) Complementary to KTD2058.
MA