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SEMICONDUCTOR TECHNICAL DATA KTA1050 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Curren
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). Complementary to KTC2022D/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Curren
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. FEATURES Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. Straight Lead (IPAK, "L" Suffix) Complementary to KTC2020D/L. KTA1040D/L EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATI
SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE CONTROL APPLICATIONS. PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS. CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. K KTA1073T EPITAXIAL PLANAR PNP TRANSISTOR E B FEATURES High Voltage : VCBO=-300V, VCEO=-300V A D DIM A B G 2 3 C D E F G H I J K L H
SEMICONDUCTOR TECHNICAL DATA KTA1045D/L EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. Complementary to KTC2025D/L MAXIMUM RATING (Ta=25 ) C
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES ᴌHigh Breakdown Voltage : VCEO=-100V. ᴌLow Collector-Emitter Saturation Voltage. : VCE(sat)=-2.0V(Max.) ᴌComplementary to KTC2018. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Vol
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