KSE801
Fairchild Semiconductor
NPN EPITAXIAL SILICON DARLINGTON TRANSISTORKSE800/801/803
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS
• Complement to KSE700/701/702/703
TO-126
ABSOLUTE MAXIMUM RATINGS
Characterist
KSE802
NPN EPITAXIAL SILICON DARLINGTON TRANSISTORKSE800/801/803
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS
• Complement to KSE700/701/702/703
TO-126
ABSOLUTE MAXIMUM RATINGS
Characteristic Collector- Base Voltage : KSE800/801
Fairchild Semiconductor
PDF
KSE803
NPN EPITAXIAL SILICON DARLINGTON TRANSISTORKSE800/801/803
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS
• Complement to KSE700/701/702/703
TO-126
ABSOLUTE MAXIMUM RATINGS
Characteristic Collector- Base Voltage : KSE800/801
Fairchild Semiconductor
PDF
KSE800
NPN EPITAXIAL SILICON DARLINGTON TRANSISTORKSE800/801/803
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS
• Complement to KSE700/701/702/703
TO-126
ABSOLUTE MAXIMUM RATINGS
Characteristic Collector- Base Voltage : KSE800/801
Fairchild Semiconductor
PDF