KSD5016
Inchange Semiconductor
Silicon NPN Power TransistorINCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD5016
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability
APPLICATIONS ·Designed for color TV horizontal output applicaition
KSD5018
Built-in Resistor at B-E for Motor DriveKSD5018
KSD5018
Built-in Resistor at B-E for Motor Drive
• High Voltage Power Darlington TR
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector- Base Vol
Fairchild Semiconductor
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