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KSD1406 KSD1406 Low Frequency Power Amplifier • Low Collector-Emitter Saturation Voltage • Complement to KSB1015 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter
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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD1408 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@IC= 3A ·Good Linearity of hFE ·Complement to Type KSB1017 APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 2
KSD1406 KSD1406 Low Frequency Power Amplifier • Low Collector-Emitter Saturation Voltage • Complement to KSB1015 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter
KSD1408 KSD1408 Power Amplifier Applications • Complement to KSB1017 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Volta
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