KSC5345 전자부품 데이터시트

KSC5367F KSC5367F High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area • High Collector-Base Voltage 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCE

KSC5367 KSC5367 High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area • High Collector Base Voltage 1 TO-220 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO V

KSC5338F KSC5338F High Voltage Power Switch Switching Application • High Speed Switching • Wide SOA 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base

KSC5338D/KSC5338DW KSC5338D/KSC5338DW D2-PAK High Voltage Power Switch Switching Application • • • • • Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : TO-220 or D2-PAK B Equivalent Cir

KSC5338 KSC5338 High Voltage Power Switch Switching Application • High Speed Switching • Wide SOA TO-220 2.Collector 3.Emitter 1 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Volt

KSC5321F KSC5321F High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG