KSC5028
Inchange Semiconductor
Silicon NPN Power TransistorINCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSC5028
DESCRIPTION ·High Breakdown Voltage-
: V(BR)CBO= 1100V(Min) ·Fast Switching speed ·Wide Area of Safe Operation ·High Reliability
APPLICATIONS ·Designed for switch
KSC5029
High Voltage and High ReliabiltyKSC5029
KSC5029
High Voltage and High Reliabilty
• High Speed Switching • Wide SOA
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitt
Fairchild Semiconductor
PDF
KSC5025
High Voltage and High ReliabiltyKSC5025
KSC5025
High Voltage and High Reliabilty
• High Speed Switching • Wide SOA
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitt
Fairchild Semiconductor
PDF
KSC5021F
High Voltage and High ReliabilityKSC5021F
KSC5021F
High Voltage and High Reliability
• High Speed Switching : tF = 0.1µs(Typ.) • Wide SOA
1
TO-220F 2.Collector 3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO V CEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Ba
Fairchild Semiconductor
PDF