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KSB1149 KSB1149 Low Collector Saturation Voltage Built-in Damper Diode at E-C • High DC Current Gain • High Power Dissipation : PC=1.3W (Ta=25°C) 1 TO-126 2.Collector 3.Base 1. Emitter PNP Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VC
KSB1116/1116A KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSD1616/1616A 1 TO-92 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Paramete
KSB1116/1116A KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSD1616/1616A 1 TO-92 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Paramete
KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W (Ta=25°C) Complement to KSD 1691 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise n
KSB1116S KSB1116S Audio Frequency Power Amplifier & Medium Speed Switching 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter
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PartNumber.co.kr | 2020 | 연락처 |