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SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. KRC881T~KRC886T EPITAXIAL PLANAR NPN TRANSISTOR E FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) With Built-in Bias Resistors. Simplify Circuit Design. Red
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. KRC881T~KRC886T EPITAXIAL PLANAR NPN TRANSISTOR E FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) With Built-in Bias Resistors. Simplify Circuit Design. Red
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. KRC881T~KRC886T EPITAXIAL PLANAR NPN TRANSISTOR E FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) With Built-in Bias Resistors. Simplify Circuit Design. Red
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. KRC881T~KRC886T EPITAXIAL PLANAR NPN TRANSISTOR E FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) With Built-in Bias Resistors. Simplify Circuit Design. Red
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. KRC881T~KRC886T EPITAXIAL PLANAR NPN TRANSISTOR E FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) With Built-in Bias Resistors. Simplify Circuit Design. Red
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