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Datasheet KPA2790GR Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | KPA2790GR | MOS Field Effect Transistor SMD Type
MOS Field Effect Transistor KPA2790GR
Features
Low on-state resistance N-channel RDS(on)1 = 28 m RDS(on)2 = 40 m P-channel RDS(on)1 = 60 m RDS(on)2 = 80 m Low input capacitance N-channel Ciss = 500 pF TYP. P-channel Ciss = 460 pF TYP. Built-in gate protection diode Small and surface mount p |  Kexin | transistor |
KPA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | KPA-3010 | RIGHT ANGLE SMD CHIP LED LAMPS
Kingbright
Features
®
3.0x1.0mm RIGHT ANGLE SMD CHIP LED LAMPS
KPA-3010
Package Dimensions
l3.0mmx1.0mm SMT LED. 2.0mm THICKNESS. lLOW POWER CONSUMPTION. lWIDE VIEWING ANGLE. lIDEAL FOR BACKLIGHT AND INDICATOR. lVARIOUS COLORS AND LENS TYPES AVAILABLE.
Description
The Brig  Kingbright Corporation led | | |
| 2 | KPA-3010F3C | RIGHT ANGLE INFRARED EMITTING DIODE 3.0mmx1.0 mm RIGHT ANGLE INFRARED EMITTING DIODE
Part Number: KPA-3010F3C
Features
z 3.0mmx1.0mm right angle SMT LED, 2.0mm thickness. z Mechanically and spectrally matched to phototransistor. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3. z Tinned pads for improved solderabili  Kingbright diode | | |
| 3 | KPA1716 | MOS Field Effect Transistor SMD Type
MOS Field Effect Transistor KPA1716
IC IC
Features
Low on-state resistance RDS(on)1 = 12.5 m RDS(on)2 = 17 m RDS(on)3 = 19 m TYP. (VGS = -10 V, ID = -4 A) TYP. (VGS = -4.5 V, ID = -4 A) TYP. (VGS = -4.01 V, ID = -4 A)
Low Ciss : Ciss = 2100 pF TYP. Built-in G-S protection diode Small and Kexin transistor | | |
| 4 | KPA1750 | MOS Field Effect Transistor SMD Type
MOS Field Effect Transistor KPA1750
Features Dual MOSFET chips in small package
4V Gate Drive Type and Low On-Resistance RDS(on)1 = 0.09 RDS(on)2 = 0.18 TYP. (VGS = -10 V, ID = -1.8 A) TYP. (VGS = -4 V, ID = -1.8A)
IC IC
Low Ciss : Ciss = 540 pF TYP. Built-in G-S protection diode Small an Kexin transistor | | |
| 5 | KPA1758 | MOS Field Effect Transistor SMD Type
MOS Field Effect Transistor KPA1758
IC IC
Features
Dual MOS FET chips in small package 2.5 V gate drive type low on-state resistance RDS(on)1 = 30 m RDS(on)2 = 40 m (MAX.) (VGS = 4.5 V, ID = 3.0 A) (MAX.) (VGS = 2.5 V, ID = 3.0 A)
1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Ga Kexin transistor | | |
| 6 | KPA1764 | MOS Field Effect Transistor SMD Type
MOS Field Effect Transistor KPA1764
IC IC
Features
Dual chip type Low on-state resistance RDS(on)1 = 27 m RDS(on)2 = 32 m RDS(on)3 = 34 m TYP. (VGS = 10 V, ID = 3.5 A) TYP. (VGS = 4.5 V, ID = 3.5 A) TYP. (VGS = 4.0 V, ID = 3.5 A)
1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gat Kexin transistor | | |
| 7 | KPA1790 | MOS Field Effect Transistor SMD Type
MOS Field Effect Transistor KPA1790
Features
Dual chip type Low on-state resistance N-channel RDS(on)1 = 0.12 RDS(on)2 = 1.19 P-channel RDS(on)1 = 0.45 RDS(on)2 = 0.74 Low input capacitance N-channel Ciss = 180 pF TYP. P-channel Ciss = 230 pF TYP. Built-in G-S protection diode Small and sur Kexin transistor | |
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