KPA1871
Kexin
MOS Field Effect TransistorSMD Type
MOS Field Effect Transistor KPA1871
IC IC
Features
Can be driven by a 2.5-V power source Low on-state resistance RDS(on)1 = 26 m RDS(on)2 = 27 m RDS(on)3 = 38 m TYP. (VGS = 4.5 V, ID = 3.0 A) TYP. (VGS = 4.0 V, ID = 3.0 A) TYP. (VGS = 2.5 V, ID = 3.
KPA1873
MOS Field Effect TransistorSMD Type
MOS Field Effect Transistor KPA1873
IC IC
Features
2.5 V drive available Low on-state resistance RDS(on)1 = 23 m RDS(on)2 = 24 m RDS(on)3 = 28 m RDS(on)4 = 29 m TYP. (VGS = 4.5 V, ID = 3.0 A) TYP. (VGS = 4.0 V, ID = 3.0 A) TYP. (VGS = 3.1 V, ID = 3.0 A) TYP. (VGS = 2.5 V, ID = 3.0 A)
TSS
Kexin
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KPA1816
MOS Field Effect TransistorSMD Type
MOS Field Effect Transistor KPA1816
IC IC
Features
1.8V drive available Low on-state resistance RDS(on)1 = 15 m RDS(on)2 = 16 m RDS(on)3 = 22.5 m RDS(on)4 = 41.5 m TYP. (VGS = -4.5 V, ID = -4.5 A) TYP. (VGS = -4.0 V, ID = -4.5 A) TYP. (VGS = -2.5 V, ID = -4.5 A) TYP. (VGS = -1.8 V, ID = -
Kexin
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KPA1890
MOS Field Effect TransistorSMD Type
MOS Field Effect Transistor KPA1890
IC IC
Features
Can be driven by a 4.0-V power source Low on-state resistance N-channel RDS(on)1 = 27 m RDS(on)2 = 37 m RDS(on)3 = 47 m P-channel RDS(on)1 = 37 m RDS(on)2 = 56 m RDS(on)3 = 64 m MAX. (VGS = 10 V, ID = 3.0 A) MAX. (VGS = 4.5 V, ID = 3.0 A)
Kexin
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